Optical and structural properties of rare earth doped GaN quantum dots

Superlattices and Microstructures

Volumn 36, Issue 4-6, 2004, Pages 707-712

  Andreev, T ^a   Hori, Y ^a,b   Biquard, X ^a   Monroy, E ^a   Jalabert, D ^a   Farchi, A ^a   Tanaka, M ^b   Oda, O ^b   Dang, Le Si ^a   Daudin, B ^a  

^a UNIV GRENOBLE ALPES   (France)

^b NGK INSULATORS LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; ELECTRON ENERGY LEVELS; EUROPIUM; GALLIUM NITRIDE; MATHEMATICAL MODELS; MORPHOLOGY; NEODYMIUM LASERS; NUCLEATION; QUENCHING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING; THULIUM; X RAY ANALYSIS;

CARRIER CONFINEMENT; ELECTRON-HOLE RECOMBINATION; EXTENDED X-RAY ABSORPTION FINE STRUCTURE (EXAFS); TRANSITION LINES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 9944233024     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.09.026     Document Type: Article

References (9)

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