메뉴 건너뛰기




Volumn 19, Issue 16, 2007, Pages 1200-1202

Enhancement of flip-chip light-emitting diodes with omni-directional reflector and textured micropillar arrays

Author keywords

Dry etching; Flip chip light emitting diodes (FC LEDs); Micropillar array; Omni directional reflectors (ODRs)

Indexed keywords

DRY ETCHING; FLIP CHIP DEVICES; MIRRORS; SUBSTRATES;

EID: 34547602314     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.901718     Document Type: Article
Times cited : (24)

References (13)
  • 1
    • 19744374735 scopus 로고    scopus 로고
    • Solid-state light sources getting smart
    • E. F. Schubert and J. K. Kim, "Solid-state light sources getting smart," Science, vol. 308, pp. 1274-1278, 2005.
    • (2005) Science , vol.308 , pp. 1274-1278
    • Schubert, E.F.1    Kim, J.K.2
  • 5
    • 0043270547 scopus 로고    scopus 로고
    • Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag
    • D. L. Hibbard, S. P. Jung, C. Wang, D. Ullery, Y. S. Zhao, W. So, H. Liu, and H. P. Lee, "Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag," Appl. Phys. Lett., vol. 83, pp. 311-313, 2003.
    • (2003) Appl. Phys. Lett , vol.83 , pp. 311-313
    • Hibbard, D.L.1    Jung, S.P.2    Wang, C.3    Ullery, D.4    Zhao, Y.S.5    So, W.6    Liu, H.7    Lee, H.P.8
  • 6
    • 34547590529 scopus 로고    scopus 로고
    • Nitride Semiconductor Light Emitting Device Having a Silver p-Contact, Transl.:Y. Kondoh, S. Wantanabe, Y. Kaneko, S. Nakagawa, N. Yamada U.S. Patent 6, 194, 743
    • "Nitride Semiconductor Light Emitting Device Having a Silver p-Contact," Transl.:Y. Kondoh, S. Wantanabe, Y. Kaneko, S. Nakagawa, N. Yamada U.S. Patent 6, 194, 743.
  • 7
    • 1542315187 scopus 로고    scopus 로고
    • Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
    • T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening," Appl. Phys. Lett., vol. 84-86, pp. 855-855, 2004.
    • (2004) Appl. Phys. Lett , vol.84-86 , pp. 855-855
    • Fujii, T.1    Gao, Y.2    Sharma, R.3    Hu, E.L.4    DenBaars, S.P.5    Nakamura, S.6
  • 9
    • 18944404941 scopus 로고    scopus 로고
    • Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface
    • May
    • H. W. Huang, C. C. Kao, J. T. Chu, H. C. Kuo, S. C. Wang, and C. C. Yu, "Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface," IEEE Photon. Technol. Lett., vol. 17, no. 5, pp. 983-985, May 2005.
    • (2005) IEEE Photon. Technol. Lett , vol.17 , Issue.5 , pp. 983-985
    • Huang, H.W.1    Kao, C.C.2    Chu, J.T.3    Kuo, H.C.4    Wang, S.C.5    Yu, C.C.6
  • 10
    • 33645533436 scopus 로고    scopus 로고
    • GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer
    • J. K. Kim, T. Gessmann, E. F. Schubert, J. Q. Xi, H. Luo, J. Cho, C. Sone, and Y. Park, "GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer," Appl. Phys. Lett., vol. 88, pp. 013501-013501, 2006.
    • (2006) Appl. Phys. Lett , vol.88 , pp. 013501-013501
    • Kim, J.K.1    Gessmann, T.2    Schubert, E.F.3    Xi, J.Q.4    Luo, H.5    Cho, J.6    Sone, C.7    Park, Y.8
  • 11
    • 3543120613 scopus 로고    scopus 로고
    • Light-emitting diodes with integrated omnidirectionally reflective contacts
    • T. Gessmann, H. Luo, J.-Q. Xi, K. P. Streubel, and E. F. Schubert, "Light-emitting diodes with integrated omnidirectionally reflective contacts," Proc. SPIE, vol. 5366, pp. 53-61, 2004.
    • (2004) Proc. SPIE , vol.5366 , pp. 53-61
    • Gessmann, T.1    Luo, H.2    Xi, J.-Q.3    Streubel, K.P.4    Schubert, E.F.5
  • 12
    • 33751382323 scopus 로고    scopus 로고
    • High light-extraction GaN-based vertical LEDs with double diffuse surface
    • Dec
    • Y. J. Lee, H. C. Kuo, T. C. Lu, and S. C. Wang, "High light-extraction GaN-based vertical LEDs with double diffuse surface," IEEE J. Quantum Electron., vol. 42, no. 12, pp. 1196-1201, Dec. 2006.
    • (2006) IEEE J. Quantum Electron , vol.42 , Issue.12 , pp. 1196-1201
    • Lee, Y.J.1    Kuo, H.C.2    Lu, T.C.3    Wang, S.C.4
  • 13
    • 34047202500 scopus 로고    scopus 로고
    • Improvement of light extraction efficiency of flip-chip ligh-temitting diode by texturing the bottom side surface of sapphire substrate
    • Jul. 1
    • D. S. Han, J. Y. Kim, S. I. Na, S. H. Kim, K. D. Lee, B. Kim, and S. J. Park, "Improvement of light extraction efficiency of flip-chip ligh-temitting diode by texturing the bottom side surface of sapphire substrate," IEEE Photon. Technol. Lett., vol. 18, no. 13, pp. 1406-1408, Jul. 1, 2006.
    • (2006) IEEE Photon. Technol. Lett , vol.18 , Issue.13 , pp. 1406-1408
    • Han, D.S.1    Kim, J.Y.2    Na, S.I.3    Kim, S.H.4    Lee, K.D.5    Kim, B.6    Park, S.J.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.