Anomalous Mn depth profiles for GaMnAsGaAs (001) thin films grown by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 4, 2007, Pages 1476-1480

  Xu, J F ^a   Thibado, P M ^a   Awo Affouda, C ^b   Ramos, F ^b   Labella, V P ^b  

^a UNIVERSITY OF ARKANSAS   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DOPING (ADDITIVES); FILM GROWTH; MANGANESE COMPOUNDS; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY;

CELL TEMPERATURES; CONCENTRATION DEPTH PROFILES; DYNAMIC SECONDARY ION MASS SPECTROMETRY; SUBSTRATE TEMPERATURES;

THIN FILMS;

EID: 34547600610     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2746351     Document Type: Article

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