Distinct growth behaviours in molecular-beam epitaxy of (In,Ga)As on GaAs(3 1 1)A substrate

Journal of Crystal Growth

Volumn 242, Issue 1-2, 2002, Pages 104-108

  Gong, Q ^a   Notzel R ^a   Wolter, J H ^a   Schonherr H P ^b   Ploog, K H ^b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

A1. Growth instability; A3. Molecular beam epitaxy

Indexed keywords

NUCLEATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES; THIN FILMS;

GROWTH INSTABILITY;

MOLECULAR BEAM EPITAXY;

EID: 0036643596     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01368-4     Document Type: Article

References (15)