Phase behavior of thin film MnGaAs interfacial reactions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 4, 2005, Pages 1752-1758

  Hilton, J L ^a   Schultz, B D ^a   McKernan, S ^a   Spanton, S M ^b   Evans, M M R ^b   Palmstrom C J ^a  

^a University of Minnesota   (United States)

^b UNIVERSITY OF WISCONSIN EAU CLAIRE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPILAYERS; INTERFACIAL REACTIONS; PHASE BEHAVIOR;

ANNEALING; COMPOSITION; DISSOCIATION; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING MANGANESE COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

THIN FILMS;

EID: 31144457619     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1949219     Document Type: Article

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