메뉴 건너뛰기




Volumn 4592, Issue , 2001, Pages 315-325

Sub-micron high aspect ratio silicon beam etch

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; PHOTOLITHOGRAPHY; PHOTORESISTS; REACTIVE ION ETCHING; SINGLE CRYSTALS;

EID: 0035772908     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.448983     Document Type: Article
Times cited : (7)

References (21)
  • 3
    • 0031654025 scopus 로고    scopus 로고
    • Design and fabrication of a high performance polysilicon vibrating ring gyroscope
    • F. Ayazi and K. Najafi, "Design and Fabrication of a High Performance Polysilicon Vibrating Ring Gyroscope", IEEE MEMS98, pp. 621-626, 1998.
    • (1998) IEEE MEMS98 , pp. 621-626
    • Ayazi, F.1    Najafi, K.2
  • 4
    • 0003950677 scopus 로고
    • U.S. Patent Nos. 4,855,017 and 4,784,720 and German Patent No. 4241045C1
    • F. Laermer and A. Schlip of R. Bosch GmbH, "Method of Anisotropically Etching Silicon", U.S. Patent Nos. 4,855,017 and 4,784,720 (1991) and German Patent No. 4241045C1 (1990).
    • (1990) Method of Anisotropically Etching Silicon
    • Laermer, F.1    Schlip, A.2
  • 5
    • 0032636883 scopus 로고    scopus 로고
    • Bosch deep silicon etching: Improving uniformity and etch rate for advanced MEMS applications
    • F. Laermer, A. Schlip, K. Funk, and M. Offenberg, "Bosch Deep Silicon Etching: Improving Uniformity and Etch Rate for Advanced MEMS Applications", MEMS 99, pp. 211-216, 1999.
    • (1999) MEMS 99 , pp. 211-216
    • Laermer, F.1    Schlip, A.2    Funk, K.3    Offenberg, M.4
  • 6
    • 0032753082 scopus 로고    scopus 로고
    • Characterization of a time multiplexed inductively coupled plasma etcher
    • A.A. Ayon, R. Braff, C.C. Lin, H.H.Sawin, and M.A. Schmidt, "Characterization of a Time Multiplexed Inductively Coupled Plasma Etcher", J. Electrochem. Soc., 146(1), pp. 339-349, 1999.
    • (1999) J. Electrochem. Soc. , vol.146 , Issue.1 , pp. 339-349
    • Ayon, A.A.1    Braff, R.2    Lin, C.C.3    Sawin, H.H.4    Schmidt, M.A.5
  • 8
    • 23044522692 scopus 로고    scopus 로고
    • 2 and F-based dry etching for high aspect ratio Si microstructures etched with an inductively coupled plasma
    • 2 and F-based Dry Etching for High Aspect Ratio Si Microstructures Etched with an Inductively Coupled Plasma", J. Vac. Sci. Technol., B 18, pp. 1890-1896, 2000.
    • (2000) J. Vac. Sci. Technol. , vol.B 18 , pp. 1890-1896
    • Tian, W.C.1    Weigold, J.W.2    Pang, S.W.3
  • 9
    • 21144482706 scopus 로고
    • 2 using an electron cyclotron resonance source
    • 2 Using an Electron Cyclotron Resonance Source", J. Vac. Sci. Technol., A 11, pp. 1206-1210, 1993.
    • (1993) J. Vac. Sci. Technol. , vol.A 11 , pp. 1206-1210
    • Sung, K.T.1    Pang, S.W.2
  • 18
    • 84995722115 scopus 로고    scopus 로고
    • Nanoscale silicon field effect transistors fabricated using imprint lithography
    • S.Y. Chou, P.R. Krauss, W. Zhang, L.J. Guo, and L. Zhuang, "Nanoscale Silicon Field Effect Transistors Fabricated using Imprint Lithography", J. Vac. Sci. Technol. B, 15, pp. 1881-1883, 1997.
    • (1997) J. Vac. Sci. Technol. , vol.B 15 , pp. 1881-1883
    • Chou, S.Y.1    Krauss, P.R.2    Zhang, W.3    Guo, L.J.4    Zhuang, L.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.