Electrical properties of gold in dislocated silicon

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 7, 2007, Pages 2185-2189

  Voss O ^a,b   Kveder, V V ^a   Seibt, M ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION CORE; GOLD IN-DIFFUSION; LOGARITHMIC DEPENDENCE;

DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; POINT DEFECTS; SCHOTTKY BARRIER DIODES; SILICON;

GOLD;

EID: 34547545478     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200675434     Document Type: Article

References (17)

1. W. Schröter and H. Cerva, Solid State Phenomena 85/86, 67 (2002).
2. D. Cavalcoli, A. Cavallini, and E. Gombia, Phys. Rev. B 56, 10208 (1997).
3. P. Omling, E. R. Weber, L. Montelius, H. Alexander, and J. Michel, Phys. Rev. B 32, 6571 (1985).
4. C. Kisielowski and E. R. Weber, Phys. Rev. B 44, 1600 (1991).
5. V. Kveder, M. Badelevych, E. Steinman, A. Izotov, W. Schröter, and M. Seibt, Appl. Phys. Lett. 84, 2106 (2004).
6. K. Knobloch, M. Kittler, and W. Seifert, J. Appl. Phys. 93(2), 1069 (2003).
7. O. Voß, V. V. Kveder, W. Schröter, and M. Seibt, phys. stat. sol. (c) 6, 1847 (2005).
8. For a compilation of data, see: W. Schröter and M. Seibt, in: Properties of Crystalline Silicon, edited by R. Hull (The Institute of Electrical Engineering, London, 1999), p. 561
9. W. Schröter, H. Hedemann, V. Kveder, and F. Riedel, J. Phys.: Condens. Matter 14, 13047 (1991).
10. W. Schröter, J. Kronewitz, U. Gnauert, F. Riedel, and M. Seibt, Phys. Rev. B 52, 13726 (1995).
11. C. B. Collins, R. O. Carlson, and C. J. Gallagher, Phys. Rev. 105, 1168 (1957).
12. J. Utzig, PhD Thesis, Göttingen (1985).
13. N. A. Stolwijk, J. Holzl, W. Frank, E. R. Weber, and H. Mehrer, Appl. Phys. A 39, 37 (1986).
14. R. Bullough and R. C. Newman, The interaction of impurities with dislocations in silicon and germanium, Progress in Semiconductors (Heywood & Co., Ltd., London, 1963).
15. N. Fujita, A. T. Blumenau, R. Jones, S. Öberg, P. R. Briddon, 11th Intern. Conf. on Extended Defects in Semiconductors, Halle 2006, unpublished.
16. M. Seibt, V. Kveder, W. Schröter, and O. Voß, phys. stat. sol. (a) 202(5), 911 (2005).
17. A. Mesli, P. Kringhi, and A. Nylandsted Larsen, Phys. Rev. B 56, 13202 (1997).