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Volumn 42, Issue 5, 2007, Pages 445-450

SiC crystal growth from transition metal silicide fluxes

Author keywords

Infiltration; Metal silicide alloy fluxes; SiC crystal; Solution growth

Indexed keywords

CRYSTAL GROWTH; DISSOLUTION; GRAPHITE; INFILTRATION; PRECIPITATION (CHEMICAL); SILICIDES; TRANSITION METALS;

EID: 34547530406     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.200610845     Document Type: Article
Times cited : (13)

References (12)
  • 4
    • 34547534500 scopus 로고    scopus 로고
    • F. A. Halden, Silicon carbide - A high Temperature Semiconductor, J. R. O'Connor and J. Smiltens, Eds. (Pergamon Press, Inc. New York), p.115 (1960).
    • F. A. Halden, Silicon carbide - A high Temperature Semiconductor, J. R. O'Connor and J. Smiltens, Eds. (Pergamon Press, Inc. New York), p.115 (1960).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.