Design of transparent indium tin oxide-based interdigitated fingers for metal semiconductor metal photodetector

Journal of the Electrochemical Society

Volumn 154, Issue 9, 2007, Pages

  Jang, Soohwan ^a,c   Ren, F ^a,c   Emanetoglu, N ^a   Shen, H ^a   Chang, W ^a   Pearton, S J ^b,c  

^a University of Florida   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERDIGITATED FINGERS; METAL SEMICONDUCTOR METAL (MSM);

COMPUTER SIMULATION; GEOMETRY; INDIUM COMPOUNDS; QUANTUM EFFICIENCY; SEMICONDUCTOR MATERIALS;

PHOTODETECTORS;

EID: 34547495562     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2756995     Document Type: Article

References (25)

1. J. L. Hamberg and C. G. Granqvist, J. Appl. Phys., 60, R123 (1986).
2. J. L. Vossen, Phys. Thin Films, 9, 1 (1977).
3. G. Haacke, Annu. Rev. Mater. Sci., 7, 73 (1977).
4. C. G. Granqvist, Appl. Opt., 20, 2606 (1981).
5. C. M. Lampert, Sol. Energy Mater., 6, 1 (1981).
6. Z. M. Jarzebski, Phys. Status Solidi A, 71, 13 (1982).
7. B. S. Kang, J. J. Chen, F. Ren, Y. Li, H. S. Kim, D. P. Norton, and S. J. Pearton, Appl. Phys. Lett., 88, 182101 (2006).
8. K. L. Chopra, S. Major, and D. K. Pandya, Thin Solid Films, 102, 1 (1983).
9. M. Quaas, C. Eggs, and H. Wulff, Thin Solid Films, 332, 277 (1998).
10. K. Ichihara, N. Inoue, and M. Okubo, Thin Solid Films, 245, 152 (1994).
11. J. E. Morris, M. I. Ridge, C. A. Bishop, and R. P. Howson, J. Appl. Phys., 54, 3497 (1983).
12. V. M. Donnelly, M. Geva, J. Long, and R. F. Karlicek, Appl. Phys. Lett., 44, 951 (1984).
13. J. P. Zheng and H. S. Kwok, Thin Solid Films, 232, 99 (1993).
14. C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. Y. Chi, C. A. Chang, J. K. Sheu, and J. F. Chen, IEEE Photon. Technol. Lett., 13, 848 (2001).
15. K. Aliberti, B. Stann, S. Svensson, R. Mehandru, F. Ren, and H. Shen, Microwave Opt. Technol. Lett., 39, 108 (2003).
16. S. V. Averine, Y. C. Chen, and Y. L. Lan, Solid-State Electron., 46, 441 (2001).
17. H. Shen, K. Aliberti, B. Stann, P. Newman, R. Mehandru, and F. Ren, Appl. Phys. Lett., 82, 3814 (2003).
18. W. A. Wohlmuth, P. Fay, C. Caneau, and I. Adesida, Electron. Lett., 32, 249 (1996).
19. J. E. Bowers and C. A. Burrus, J. Lightwave Technol., 5, 1339 (1987).
20. S. Adachi, Physical Properties of III-V Semiconductor Compounds, 2nd ed., Wiley, New York (1992).
21. E. Zielinski, H. Schweizer, K. Streubel, H. Eisele, and G. Weimann, J. Appl. Phys., 59, 2196 (1986).
22. J. Burm, K. I. Litvin, W. J. Kshaff, and L. F. Eastman, IEEE Photon. Technol. Lett., 6, 722 (1994).
23. H. Beneking, IEEE Trans. Electron Devices, ED-29, 1420 (1982).
24. G. W. Farnell, I. A. Cermac, P. Silvester, and S. K. Wong, IEEE Trans. Sonics Ultrason., 17, 188 (1970).
25. H. Hodora, Fiber Integr. Opt., 4, 233 (1983).