Mixing characteristics of InGaAs metal-semiconductor-metal photodetectors with Schottky enhancement layers

Applied Physics Letters

Volumn 82, Issue 22, 2003, Pages 3814-3816

  Shen, H ^a   Aliberti, K ^a   Stann, B ^a   Newman, P ^a   Mehandru, R ^b   Ren, F ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; LIGHT MODULATION; OPTOELECTRONIC DEVICES; PHOTOCURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

SCHOTTKY ENHANCEMENT LAYERS (SEL);

PHOTODETECTORS;

EID: 0037970187     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1579117     Document Type: Article

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