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Volumn 82, Issue 22, 2003, Pages 3814-3816
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Mixing characteristics of InGaAs metal-semiconductor-metal photodetectors with Schottky enhancement layers
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC POTENTIAL;
LIGHT MODULATION;
OPTOELECTRONIC DEVICES;
PHOTOCURRENTS;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SCHOTTKY ENHANCEMENT LAYERS (SEL);
PHOTODETECTORS;
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EID: 0037970187
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1579117 Document Type: Article |
Times cited : (8)
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References (10)
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