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Volumn 82, Issue 22, 2003, Pages 3814-3816

Mixing characteristics of InGaAs metal-semiconductor-metal photodetectors with Schottky enhancement layers

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; LIGHT MODULATION; OPTOELECTRONIC DEVICES; PHOTOCURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0037970187     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1579117     Document Type: Article
Times cited : (8)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.