Analysis of the mixing effect in InAlAs/InGaAs metal-semiconductor-metal photodetectors

Microwave and Optical Technology Letters

Volumn 39, Issue 2, 2003, Pages 108-112

  Aliberti, K ^a   Stann, B ^a   Svensson, S ^a   Mehandru, R ^b   Ren, F ^b   Shen, H ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b University of Florida   (United States)

Author keywords

InGaAs photodetectors; Metal semiconductor metal detectors; Optoelectronic mixers; Schottky enhancement layers

Indexed keywords

BANDWIDTH; INTEGRATED CIRCUIT LAYOUT; INTEGRATED OPTOELECTRONICS; LIGHT MODULATION; MIXING; OPTOELECTRONIC DEVICES; OSCILLATORS (ELECTRONIC); SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

FREQUENCY BANDWIDTH; INDIUM ALUMINUM ARSENIDE; METAL SEMICONDUCTOR METAL PHOTODETECTORS; MIXED SIGNAL FREQUENCIES; OPTOELECTRONIC MIXER; OPTOELECTRONIC MIXING EFFECT; SCHOTTKY ENHANCEMENT LAYERS;

PHOTODETECTORS;

EID: 0141860907     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.11141     Document Type: Article

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