n-type and p-type double-walled carbon nanotube field-effect transistors based on charge-transfer modulation

Applied Physics A: Materials Science and Processing

Volumn 88, Issue 4, 2007, Pages 745-749

  Li, Y F ^a   Hatakeyama, R ^a   Kaneko, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; ENCAPSULATION; ENERGY GAP; ION BOMBARDMENT; MULTIWALLED CARBON NANOTUBES (MWCN); TRANSPORT PROPERTIES;

AMBIPOLAR SEMICONDUCTING BEHAVIORS; ELECTRON ACCEPTORS; ELECTRON DONORS;

FIELD EFFECT TRANSISTORS;

EID: 34547305708     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-007-4061-2     Document Type: Article

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