Electrical properties of ferromagnetic semiconducting single-walled carbon nanotubes

Applied Physics Letters

Volumn 89, Issue 8, 2006, Pages

  Li, Y F ^a   Hatakeyama, R ^a   Kaneko, T ^a   Izumida, T ^a   Okada, T ^a   Kato, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE; ELECTRIC PROPERTIES; FERROMAGNETIC MATERIALS; OSCILLATIONS; SEMICONDUCTOR MATERIALS; SYNTHESIS (CHEMICAL); TRANSISTORS;

AMBIPOLAR BEHAVIOR; COULOMB BLOCKADE OSCILLATIONS; SINGLE-ELECTRON TRANSISTOR; SINGLE-WALLED CARBON NANOTUBES (SWCNTS);

CARBON NANOTUBES;

EID: 33747828129     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2337872     Document Type: Article

References (16)

1. S. J. Tans, A. R. M. Verschueren, and C. Dekker, Nature (London) 393, 49 (1998).
2. R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and Ph. Avouris, Appl. Phys. Lett. 73, 2447 (1998).
3. M. Bockrath, D. H. Cobden, P. L. McEuen, N. G. Chopra, A. Zettl, A. Thess, and R. E. Smalley, Science 275, 1922 (1997).
4. A. Javey, R. Tu, D. B. Farmer, J. Guo, R. G. Gordon, and H. J. Dai, Nano Lett. 5, 345 (2005).
5. J. Kong, C. Zhou, E. Yenilmez, and H. J. Dai, Appl. Phys. Lett. 77, 3977 (2000).
6. T. Takenobu, T. Takano, M. Shiraishi, Y. Murakami, M. Ata, H. Kataura, Y. Achiba, and Y. Iwasa, Nat. Mater. 2, 683 (2003).
7. M. Radosavljevic, M. Freitag, K. V. Thadani, and A. T. Johnson, Nano Lett. 2, 761 (2002).
8. A. Javey, M. Shim, and H. J. Dai, Appl. Phys. Lett. 80, 1064 (2002).
9. A. Jensen, J. R. Hauptmann, J. Nygård, and P. E. Lindelof, Phys. Rev. B 72, 035419 (2005).
10. Y. J. Kang, J. Choi, C. Y. Moon, and K. J. Chang, Phys. Rev. B 71, 115441 (2005).
11. K. Tohji, T. Goto, H. Takahashi, Y. Shinoda, N. Shimizu, B. Jeyadevan, I. Matsuoka, Y. Saito, A. Kasuya, T. Ohsuna, K. Hiraga, and Y. Nishina, Nature (London) 383, 679 (1996).
12. T. Izumida, G. H. Jeong, Y. Neo, T. Hirata, R. Hatakeyama, H. Mimura, K. Omote, and Y. Kasama, Jpn. J. Appl. Phys., Part 1 44, 1606 (2005).
13. Y. Taur and T. Ning, Fundamentals of Modern VLSI Devices (Cambridge University Press, Cambridge, 1998).
14. C. W. Zhou, J. Kong, E. Yenilmez, and H. J. Dai, Science 290, 1552 (2000).
15. J. S. Bunch, Y. Yaish, M. Brink, K. Bolotin, and P. L. McEuen, Nano Lett. 5, 287 (2005).
16. A. Bezryadin, A. R. M. Verschueren, S. J. Tan, and C. Dekker, Phys. Rev. Lett. 80, 4036 (1998).