Fabrication and characteristics of thin-film InGaN-GaN light-emitting diodes with TiO2/SiO2 omnidirectional reflectors

Semiconductor Science and Technology

Volumn 22, Issue 7, 2007, Pages 831-835

  Chiu, C H ^a   Kuo, H C ^a   Lee, C E ^a   Lin, C H ^b   Cheng, P C ^a   Huang, H W ^a   Lu, T C ^a   Wang, S C ^a   Leung, K M ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b POLYTECHNIC UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; GALLIUM NITRIDE; PHOTONIC BAND GAP; QUANTUM EFFICIENCY; THIN FILMS;

OMNIDIRECTIONAL REFLECTORS; RADIATION PATTERNS; THIN-FILM LED;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 34547301441     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/7/029     Document Type: Article

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