Ageing of thin-film capacitor structures based on PZT

Ferroelectrics

Volumn 348, Issue , 2007, Pages 25-32

  Delimova, L A ^a   Grekhov, I V ^a   Mashovets, D V ^a   Titkov, I E ^a   Afanasjev, V P ^b   Afanasjev, P V ^b   Kramar, G P ^b   Petrov, A A ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b SAINT PETERSBURG ELECTROTECHNICAL UNIVERSITY LETI   (Russian Federation)

Author keywords

Ageing; Grain boundaries; Interface; Leakage; Polychrystalline thin film capacitors; Trans

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CAPACITORS; DIELECTRIC LOSSES; GRAIN BOUNDARIES; LEAD COMPOUNDS; LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS;

INTERFACE TRAPS; OXYGEN CONTENTS; POLYCHRYSTALLINE THIN-FILM CAPACITORS;

THIN FILM CIRCUITS;

EID: 34547293342     PISSN: 00150193     EISSN: 15635112     Source Type: Conference Proceeding    
DOI: 10.1080/00150190701196054     Document Type: Conference Paper

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