Low and anisotropic barrier energy for adatom migration on a GaAs (110) surface studied by first-principles calculations

Applied Physics Letters

Volumn 83, Issue 20, 2003, Pages 4187-4189

  Ishii, Akira ^a   Aisaka, Tsuyoshi ^a   Oh, Ji Won ^b   Yoshita, Masahiro ^b   Akiyama, Hidefumi ^b  

^a TOTTORI UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; APPROXIMATION THEORY; ATOMS; CHEMICAL BONDS; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; MOLECULAR BEAM EPITAXY; POTENTIAL ENERGY; PROBABILITY DENSITY FUNCTION; RELAXATION PROCESSES; SURFACE PROPERTIES;

ADATOM MIGRATION; BARRIER ENERGY; BRILLOUIN ZONE; FIRST PRINCIPLE CALCULATIONS; HOPPING BARRIER ENERGY; TROULLIER-MARTINS-TYPE NORM CONSERVING PSEUDOPOTENTIALS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0346342974     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1627945     Document Type: Article

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