Control of MBE surface step-edge kinetics to make an atomically smooth quantum well

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 62-67

  Yoshita, Masahiro ^a   Oh, Ji Won ^a   Akiyama, Hidefumi ^a,b   Pfeiffer, Loren N ^b   West, Ken W ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

A1. Surface morphology; A3. Molecular beam epitaxy; A3. Quantum wells; Al. Atomic force microscopy; B2. Gallium arsenide

Indexed keywords

ATOMIC FORCE MICROSCOPY; MORPHOLOGY; PHOTOLUMINESCENCE; REACTION KINETICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

CLEAVED EDGE OVERGROWTH (CEO);

MOLECULAR BEAM EPITAXY;

EID: 0037382690     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02372-2     Document Type: Conference Paper

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