Annealing temperature effect on field emission of silicon emitter arrays with sol-gel (Ba0.65Sr0.35)TiO3 coatings

Ferroelectrics

Volumn 334, Issue 1 PART 2, 2006, Pages 253-261

  Lu, H ^a   Chen, X F ^b   Zhu, W G ^a   Pan, J S ^b   Tan, O K ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

BST thin film; electron emission; sol gel

Indexed keywords

ANNEALING TEMPERATURE EFFECTS; BARE SILICON TIPS; BST THIN FILMS; FERMI ENERGY; INTERFACIAL REACTIONS; OXYGEN VACANCY CONCENTRATION; PEROVSKITE STRUCTURES; SILICON EMITTER ARRAYS; SILICON FIELD EMITTER ARRAYS; SILICON TIPS; SOL-GEL COATINGS; THRESHOLD ELECTRIC FIELDS; TIO;

ANNEALING; BARIUM; COATINGS; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; ELECTRONS; FERROELECTRICITY; FIELD EMISSION; GELS; OXYGEN; OXYGEN VACANCIES; PEROVSKITE; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILMS; VAPOR DEPOSITION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 34547145251     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190600695941     Document Type: Conference Paper

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