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Volumn 22, Issue 7, 2007, Pages 1775-1778

Electrical characterization of defect states in local conductivity domains in ZnO:N,As layers

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVITY DOMAIN; DEFECT-TO-BAND TRANSITIONS; SCANNING CAPACITANCE MICROSCOPY; SCANNING SURFACE POTENTIAL MICROSCOPY;

EID: 34547099589     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2007.0238     Document Type: Article
Times cited : (4)

References (11)
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    • Butkhuzi, T.V.1    Bureyev, A.V.2    Georgobiani, A.N.3    Kekelidze, N.P.4    Khulordava, T.G.5
  • 2
    • 34547132190 scopus 로고    scopus 로고
    • B.K. Meyer, J. Sann, N. Volbers, A. Zeuner, S. Lautenschläger, A. Hoffmann, and U. Haboeck: Group I elements in ZnO, in Progress in Semiconductor Materials V-Novel Materials and Electronic and Optoelectronic Applications, edited by L.J. Olafsen, R.M. Biefeld, M.C. Wanke, A.W. Saxler (Mater. Res. Soc. Symp. Proc. 891, Warrendale, PA, 2006), EE10-24.1, p. 491.
    • B.K. Meyer, J. Sann, N. Volbers, A. Zeuner, S. Lautenschläger, A. Hoffmann, and U. Haboeck: Group I elements in ZnO, in Progress in Semiconductor Materials V-Novel Materials and Electronic and Optoelectronic Applications, edited by L.J. Olafsen, R.M. Biefeld, M.C. Wanke, A.W. Saxler (Mater. Res. Soc. Symp. Proc. 891, Warrendale, PA, 2006), EE10-24.1, p. 491.
  • 3
    • 0037104275 scopus 로고    scopus 로고
    • Origin of p-type doping difficulty in ZnO: The impurity perspectivey
    • C.H. Park, S.B. Zhang, and S-H. Wei: Origin of p-type doping difficulty in ZnO: The impurity perspectivey. Phys. Rev. B: Condens. Matter 66, 73202 (2002).
    • (2002) Phys. Rev. B: Condens. Matter , vol.66 , pp. 73202
    • Park, C.H.1    Zhang, S.B.2    Wei, S.-H.3
  • 4
    • 33747890460 scopus 로고    scopus 로고
    • p-Type conduction in phosphorus-doped ZnO thin films by MOCVD and thermal activation of the dopant
    • Y. Miao, Z. Ye, W. Xu, F. Chen, X. Zhou, B. Zhao, L. Zhu, and J. Lu: p-Type conduction in phosphorus-doped ZnO thin films by MOCVD and thermal activation of the dopant. Appl. Surf. Sci. 252(22), 7953 (2006).
    • (2006) Appl. Surf. Sci , vol.252 , Issue.22 , pp. 7953
    • Miao, Y.1    Ye, Z.2    Xu, W.3    Chen, F.4    Zhou, X.5    Zhao, B.6    Zhu, L.7    Lu, J.8
  • 5
    • 0033688024 scopus 로고    scopus 로고
    • Unipolarity of ZnO with a wide-band gap and its solution using codoping method
    • T. Yamamoto and H. Katayama-Yoshida: Unipolarity of ZnO with a wide-band gap and its solution using codoping method. J. Cryst. Growth 214-215, 552 (2000).
    • (2000) J. Cryst. Growth , vol.214-215 , pp. 552
    • Yamamoto, T.1    Katayama-Yoshida, H.2
  • 6
    • 0043269843 scopus 로고    scopus 로고
    • Cluster-doping approach for wide-gap semiconductors: The case of p-type ZnO
    • L.G. Wang and A. Zunger: Cluster-doping approach for wide-gap semiconductors: The case of p-type ZnO. Phys. Rev. Lett. 90(25), 254601 (2003).
    • (2003) Phys. Rev. Lett , vol.90 , Issue.25 , pp. 254601
    • Wang, L.G.1    Zunger, A.2
  • 8
    • 33645166197 scopus 로고    scopus 로고
    • Local p-type conductivity in n-GaN and n-ZnO layers due to inhomogeneous dopant incorporation
    • A. Krtschil, D.C. Look, Z-Q. Fang, A. Dadgar, A. Diez, and A. Krost: Local p-type conductivity in n-GaN and n-ZnO layers due to inhomogeneous dopant incorporation. Physica B 376-377, 703 (2006).
    • (2006) Physica B , vol.376-377 , pp. 703
    • Krtschil, A.1    Look, D.C.2    Fang, Z.-Q.3    Dadgar, A.4    Diez, A.5    Krost, A.6
  • 10
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    • Transient scanning capacitance microscopy: An approach for local electrical defect spectroscopy
    • in preparation for submission
    • A. Krtschil, A. Dadgar, and A. Krost: Transient scanning capacitance microscopy: An approach for local electrical defect spectroscopy. J. Appl. Phys. (in preparation for submission).
    • J. Appl. Phys
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  • 11
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    • Decoration effects as origin of dislocation-related charges in gallium nitride layers investigated by scanning surface potential microscopy
    • A. Krtschil, A. Dadgar, and A. Krost: Decoration effects as origin of dislocation-related charges in gallium nitride layers investigated by scanning surface potential microscopy. Appl. Phys. Lett. 82(14), 2263 (2003).
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    • Krtschil, A.1    Dadgar, A.2    Krost, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.