Effect of AlN buffer thickness on stress relaxation in GaN layer on Si (1 1 1)

Solid-State Electronics

Volumn 51, Issue 7, 2007, Pages 1005-1008

  Kim, Deok Kyu ^a  

^a Chongju University   (South Korea)

Author keywords

AlN buffer; Crack; Metalorganic chemical vapor deposition; Silicon (1 1 1); Stress

Indexed keywords

BAND EDGE PHOTOLUMINESCENCE; BUFFER THICKNESS; SILICON SUBSTRATES; X-RAY ROCKING CURVE;

CRACK INITIATION; CRYSTALLINE MATERIALS; EPITAXIAL LAYERS; GALLIUM NITRIDE; ORGANOMETALLICS; PHOTOLUMINESCENCE; STRESS RELAXATION; VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 34447510976     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.05.007     Document Type: Article

References (14)

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