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Volumn 16, Issue 1, 2006, Pages 41-55

Studies on test and evaluation of N+-P junction silicon photo-detectors for space qualification

Author keywords

Photo detectors; Qualification; Space application

Indexed keywords

OPTO-ELECTRONIC PROPERTIES; QUALIFICATION; SILICON PHOTO-DETECTORS; SPACE APPLICATION;

EID: 33645318462     PISSN: 09711600     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (6)

References (16)
  • 1
    • 84888801886 scopus 로고
    • Gallium arsenide solar cells for low temperature low intensity applications
    • Campesato, R., and Flores, C., Gallium arsenide solar cells for low temperature low intensity applications, ESA SP-$$$, Vol. 320, pp. 759-763, 1991.
    • (1991) ESA SP-$$$ , vol.320 , pp. 759-763
    • Campesato, R.1    Flores, C.2
  • 3
    • 0025446637 scopus 로고
    • Measurement of minority carrier life time in silicon solar cells using an A.C. light source
    • Alka Nagpal, Gupta, R.S., Srivastava, G. P., Jain, V. K. and Chilana, G. S. Measurement of minority carrier life time in silicon solar cells using an A.C. light source, Solar cells, Vol.29, pp.73-81, 1990.
    • (1990) Solar Cells , vol.29 , pp. 73-81
    • Nagpal, A.1    Gupta, R.S.2    Srivastava, G.P.3    Jain, V.K.4    Chilana, G.S.5
  • 5
    • 0031102888 scopus 로고    scopus 로고
    • Crystalline silicon technology for photovoltaics
    • Singh, S.N and Singh, P. K., Crystalline silicon technology for photovoltaics, IEJE Journal of Research, Vol. 43, pp. 97-124, 1997.
    • (1997) IEJE Journal of Research , vol.43 , pp. 97-124
    • Singh, S.N.1    Singh, P.K.2
  • 7
    • 27844508992 scopus 로고    scopus 로고
    • Effect of electron irradiation on optical properties of silicon oxynitride thin films
    • In press
    • Shivaprasad Karanth, Ganesh H. Shanbhogue and Nagendra, C. L. Effect of electron irradiation on optical properties of silicon oxynitride thin films, Applied Optics, 2005 (In press).
    • (2005) Applied Optics
    • Karanth, S.1    Shanbhogue, G.H.2    Nagendra, C.L.3
  • 11
    • 33645316317 scopus 로고
    • Determination of recombination center position from the temperature dependence of minority carrier life time in the base region of P-N junction
    • Battacharya, D.K., Bhai Mansingh and Swarup, P., Determination of Recombination Center Position from the Temperature Dependence of Minority Carrier Life Time in the Base Region of P-N Junction, J. Appl. Phys. Vol.57, pp. 2942-3947, 1995.
    • (1995) J. Appl. Phys. , vol.57 , pp. 2942-3947
    • Battacharya, D.K.1    Mansingh, B.2    Swarup, P.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.