Study on absorbance and laser damage threshold of HfO2 films prepared by ion-assisted reaction deposition

Chinese Optics Letters

Volumn 2, Issue 5, 2004, Pages 305-307

  Zhang, Dawei ^a   Fan, Shuhai ^a   Gao, Weidong ^a   He, Hongbo ^a   Wang, Yingjian ^a   Shao, Jianda ^a   Fan, Zhengxiu ^a   Sun, Haojie ^b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b Qufu Normal College   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; OXIDES; PARTIAL PRESSURE; THIN FILMS;

ABSORBANCE; HAFNIUM DIOXIDE; ION ASSISTED REACTION DEPOSITION; LASER DAMAGE THRESHOLD;

HAFNIUM COMPOUNDS;

EID: 3442899177     PISSN: 16717694     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

1. R. Chow, S. Falabella, G. E. Loomis, F. Rainer, C. J. Stolz, and M. R. Kozlowski, Appl. Opt. 32, 5567 (1993).
2. D. Reicher, P. Black, and K. Jungling, Appl. Opt. 39, 1589 (2000).
3. M. Alvisi, F. De Tomasi, M. R. Perrone, M. L. Protopapa, A. Rizzo, F. Sarto, and S. Scaglione, Thin Solid Films 396, 44 (2001).
4. B. Andre, L. Poupinet, and G. Ravel, J. Vac. Sci. Technol. A 18, 2372 (2000).
5. M. Gilo and N. Croitoru, Thin Sold Films 350, 203 (1999).
6. M. Alvisi, M. Di Giulio, S. G. Marrone, M. R. Perrone, and M. L. Protopapa, Thin Sold Films 358, 250 (2000).
7. Y. A. Zhao, Y. J. Wang, H. Gong, J. D. Shao, and Z. X. Fan, Appl. Surface Sci. 210, 353 (2003).
8. H. Y. Hu, Z. X. Fan, and F. Luo, Appl. Opt. 40, 1950 (2001).
9. J. P. Hu, P. Ma, Q. Xu, and W. Li, Chin. Opt. Lett. 1, 340 (2003).
10. H. Y. Hu, Z. X. Fan, and Y. Liu, Chin. J. Lasers (in Chinese) 26, 489 (1999).