메뉴 건너뛰기




Volumn 27, Issue 13-15, 2007, Pages 4011-4015

1/f electrical noise due to space charge regions

Author keywords

Dielectric properties; Electrical noise; Electrical properties; Grain boundaries; Surfaces

Indexed keywords

BIAS VOLTAGE; DIELECTRIC PROPERTIES; ELECTRIC SPACE CHARGE; GRAIN BOUNDARIES; INTERFACES (MATERIALS); LORENTZ FORCE;

EID: 34347344979     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2007.02.098     Document Type: Article
Times cited : (7)

References (9)
  • 1
    • 0030715197 scopus 로고    scopus 로고
    • Epitaxial photoconductive detectors: a kind of photo-FET devices
    • Izpura J.I., and Muñoz E. Epitaxial photoconductive detectors: a kind of photo-FET devices. Proceedings of the IEEE-WOFE'97 (1996) 73-80
    • (1996) Proceedings of the IEEE-WOFE'97 , pp. 73-80
    • Izpura, J.I.1    Muñoz, E.2
  • 2
    • 0001521812 scopus 로고    scopus 로고
    • Surface band-bending assessment by photocurrent techniques. Application to III-V semiconductors
    • Izpura I., Valtueña J.F., and Muñoz E. Surface band-bending assessment by photocurrent techniques. Application to III-V semiconductors. Semicond. Sci. Technol. 12 (1997) 678-686
    • (1997) Semicond. Sci. Technol. , vol.12 , pp. 678-686
    • Izpura, I.1    Valtueña, J.F.2    Muñoz, E.3
  • 4
    • 24544459259 scopus 로고
    • 1/f noise is no surface effect
    • Hooge F.N. 1/f noise is no surface effect. Phys. Lett. 29A (1969) 139-140
    • (1969) Phys. Lett. , vol.29 A , pp. 139-140
    • Hooge, F.N.1
  • 7
    • 0035309096 scopus 로고    scopus 로고
    • Side contact effects on the capacitance properties of junction devices. Application to III-nitrogen structures
    • Izpura J.I. Side contact effects on the capacitance properties of junction devices. Application to III-nitrogen structures. Semicond. Sci. Technol. 16 (2001) 243-249
    • (2001) Semicond. Sci. Technol. , vol.16 , pp. 243-249
    • Izpura, J.I.1
  • 8
    • 34347337067 scopus 로고    scopus 로고
    • Izpura, J. I., 1/f electrical noise in planar resistors: the joint effect of a backgating noise and an instrumental disturbance. IEEE Trans. Instrum. Meas., accepted for publication.
  • 9
    • 0036481366 scopus 로고    scopus 로고
    • Measurement of 1/f noise and its application in materials science
    • Raychaudhuri A.K. Measurement of 1/f noise and its application in materials science. Curr. Opin. Solid. State Mater. Sci. 6 (2002) 67-85
    • (2002) Curr. Opin. Solid. State Mater. Sci. , vol.6 , pp. 67-85
    • Raychaudhuri, A.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.