Surface band-bending assessment by photocurrent techniques. Application to III-V semiconductors

Semiconductor Science and Technology

Volumn 12, Issue 6, 1997, Pages 678-686

  Izpura, I ^a   Valtuena J F ^a   Munoz E ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001521812     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/6/006     Document Type: Article

References (12)

1. Lourenço M A, Homewood K P and McLellan R D 1993 J. Appl. Phys. 73 2958
2. Lourenço M A and Homewood K P 1993 Semicond. Sci. Technol. 8 1277
3. Muñoz E (ed) 1994 DX Centers-Donors in AIGaAs and Related Compounds (Switzerland: Sci Tech Publications)
4. Sze S M 1985 Semiconductor Devices (New York: Wiley) ch 5
5. Aldao C M, Valtueña J F, Izpura I and Muñoz E 1994 Phys. Rev. B Rapid Commun. 50 17729
6. Uchida Y, Mishima T, Tanoue T, Takahama M and Takahashi S 1990 Gallium Arsenide and Related Compounds 1989 (Inst. Phys. Conf. Ser. 105) ed T Ikoma and H Watanabe (Bristol: Institute of Physics) p 447
7. Bahl S R, Azzam W J and del Alamo JA 1991 J. Crystal Growth 111 479
8. Sacedón A et al 1995 Appl. Phys. Lett. 66 3334
9. Wieder H H 1981 Appl Phys. Lett. 38 170
10. Jesson D E, Pennycook S J, Baribeau J M and Houghton D C 1993 Phys. Rev. Lett. 71 1774
11. Valtueña J F et al 1997 J. Crystal Growth submitted
12. Izpura I et al to be published