Growth and microstructure dependence of electronic and magnetic properties in magnetically doped Gd-Si amorphous semiconductors

Physical Review B - Condensed Matter and Materials Physics

Volumn 75, Issue 18, 2007, Pages

  Zeng, Li ^a,b   Helgren, Erik ^c   Hellman, Frances ^c   Islam, Rafiqul ^d   Smith, David J ^d  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of California Berkeley   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34347324126     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.75.184404     Document Type: Article

References (23)

1. W. Teizer, F. Hellman, and R. C. Dynes, Solid State Commun. SSCOA4 0038-1098 10.1016/S0038-1098(00)00007-7 114, 81 (2000).
2. E. Helgren, J. J. Cherry, L. Zeng, and F. Hellman, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.71.113203 71, 113203 (2005).
3. F. Hellman, M. Q. Tran, A. E. Gebala, E. M. Wilcox, and R. C. Dynes, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.77.4652 77, 4652 (1996).
4. E. Helgren, L. Zeng, K. Burch, D. Basov, and F. Hellman, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.73.155201 73, 155201 (2006).
5. P. F. Carcia, S. I. Shah, and W. B. Zeper, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.102912 56, 2345 (1990).
6. H. Matsui, H. Toyoda, and H. Sugai, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1943452 23, 671 (2005).
7. M. Ohring, The Materials Science of Thin Film, 1st ed. (Academic Press, New York, 1991), p. 228.
8. M. Moske and K. Samwer, Z. Phys. B: Condens. Matter ZPCMDN 0722-3277 10.1007/BF01313612 77, 3 (1989).
9. J. A. Thornton and D. W. Hoffman, J. Vac. Sci. Technol. JVSTAL 0022-5355 10.1116/1.570724 18, 203 (1981).
10. D. W. Hoffman and J. A. Thornton, J. Vac. Sci. Technol. JVSTAL 0022-5355 10.1116/1.571463 20, 355 (1982).
11. J. A. Thornton and D. W. Hoffman, Thin Solid Films THSFAP 0040-6090 10.1016/0040-6090(89)90030-8 171, 5 (1989).
12. F. Hellman and E. M. Gyorgy, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.68.1391 68, 1391 (1992).
13. A. Misra and M. Nastasi, J. Mater. Res. JMREEE 0884-2914 14, 4466 (1999).
14. A. Misra and M. Nastasi, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1286393 18, 2517 (2000).
15. F. Hellman, D. R. Queen, R. M. Potok, and B. L. Zink, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.84.5411 84, 5411 (2000).
16. P. Xiong, B. L. Zink, S. I. Applebaum, F. Hellman, and R. C. Dynes, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.59.R3929 59, R3929 (1999).
17. M. H. Brodsky, D. Kaplan, and J. F. Ziegler, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1654388 21, 305 (1972).
18. J. S. Custer, M. O. Thompson, D. C. Jacobson, J. M. Poate, S. Roorda, and W. C. Sinke, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.111121 64, 437 (1994).
19. D. Haskel, J. W. Freeland, J. Cross, R. Winarski, M. Newville, and F. Hellman, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.67.115207 67, 115207 (2003).
20. K. Laaziri, S. Kycia, S. Roorda, M. Chicoine, J. L. Robertson, J. Wang, and S. C. Moss, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.82.3460 82, 3460 (1999).
21. D. Querlioz, E. Helgren, D. R. Queen, F. Hellman, R. Islam, and D. J. Smith, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2135380 87, 221901 (2005).
22. W. Teizer, F. Hellman, and R. C. Dynes, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.85.848 85, 848 (2000).
23. K. Racette, C. Brooks, C. R. Guarnieri, and D. Hendy, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.582310 18, 1119 (2000).