Field- and concentration-tuned scaling of a quantum phase transition in a magnetically doped semiconductor

Physical Review B - Condensed Matter and Materials Physics

Volumn 73, Issue 15, 2006, Pages

  Helgren, E ^a   Zeng, L ^b   Burch, K ^b,c   Basov, D ^b   Hellman, F ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33645469918     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.73.155201     Document Type: Article

References (25)

1. S. Scahdev, Quantum Phase Transitions (Cambridge University Press, New York, 1999).
2. G. Hertel, D. J. Bishop, E. G. Spencer, J. M. Rowell, and R. C. Dynes, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.50.743 50, 743 (1982).
3. H.-L. Lee, J. P. Carini, D. V. Baxter, W. Henderson, and G. Gruner, Science SCIEAS 0036-8075 10.1126/science.287.5453.633 287, 633 (2000).
4. E. Helgren, G. Gruner, M. R. Ciofalo, D. V. Baxter, and J. P. Carini, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.87.116602 87, 116602 (2001).
5. F. Hellman, M. Q. Tran, A. E. Gebala, E. M. Wilcox, and R. C. Dynes, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.77.4652 77, 4652 (1996).
6. E. Helgren, J. J. Cherry, L. Zeng, and F. Hellman, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.71.113203 71, 113203 (2005).
7. D. N. Basov, A. M. Bratkovsky, P. F. Henning, B. Zink, F. Hellman, Y. J. Wang, C. C. Homes, and M. Strongin, Europhys. Lett. EULEEJ 0295-5075 10.1209/epl/i2002-00567-2 57, 240 (2002).
8. F. Hellman, D. R. Queen, R. M. Potok, and B. L. Zink, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.84.5411 84, 5411 (2000).
9. W. Teizer, F. Hellman, and R. C. Dynes, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.67.121102 67, 121102 (R) (2003).
10. W. Teizer, F. Hellman, and R. C. Dynes, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.85.848 85, 848 (2000).
11. E. Abrahams and G. Kotliar, Science SCIEAS 0036-8075 10.1126/science.274. 5294.1853 274, 1853 (1996).
12. S. Bogdonavich, M. P. Sarachik, and R. N. Bhatt, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.82.137 82, 137 (1999).
13. D. Belitz and T. R. Kirkpatrick, Rev. Mod. Phys. RMPHAT 0034-6861 10.1103/RevModPhys.66.261 66, 261 (1994).
14. S. L. Sondhi, S. M. Girvin, J. P. Carini, and D. Shahar, Rev. Mod. Phys. RMPHAT 0034-6861 10.1103/RevModPhys.69.315 69, 315 (1997).
15. W. J. Padilla, Z. Q. Li, K. S. Burch, Y. S. Lee, K. J. Mikolaitis, and D. N. Basov, Rev. Sci. Instrum. RSINAK 0034-6748 10.1063/1.1805252 75, 4710 (2004).
16. E. Helgren, N. P. Armitage, and G. Gruner, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69.014201 69, 014201 (2004).
17. F. J. Wegner, Z. Phys. ZEPYAA 0044-3328 25, 327 (1976).
18. W. Teizer, F. Hellman, and R. C. Dynes, Solid State Commun. SSCOA4 0038-1098 10.1016/S0038-1098(00)00007-7 114, 81 (2000).
19. A. L. Efros and B. I. Shklovskii, in Electron-Electron Interactions in Disordered Systems, edited by, A. L. Efros, and, M. Pollak, (Elsevier, New York, 1985), pp. 409-482.
20. L. W. Engel, D. Shahar, C. Kurdak, and D. C. Tsui, in Proceedings of the 11th International Conference on High Magnetic Fields in the Physics of Semiconductors, edited by, D. Heiman, (World Scientific, Singapore, 1995), p. 236.
21. J. M. D. Coey, M. Viret, and S. von Molnar, Adv. Phys. ADPHAH 0001-8732 48, 267 (1999).
22. F. Hellman, W. Geerts, and B. Donehew, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.67.012406 67, 012406 (2002).
23. P. Dai, Y. Zhang, and M. P. Sarachik, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.45.3984 45, 3984 (1992).
24. T. F. Rosenbaum, R. F. Milligan, M. A. Paalanen, G. A. Thomas, R. N. Bhatt, and W. Lin, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.27.7509 27, 7509 (1983).
25. L. Bokacheva, W. Teizer, F. Hellman, and R. C. Dynes, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69.235111 69, 235111 (2004).