Magnetic field induced insulator to metal transition in amorphous-GdxSi1-x

Solid State Communications

Volumn 114, Issue 2, 2000, Pages 81-86

  Teizer, W ^a   Hellman, F ^a   Dynes, R C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS ALLOYS; AMORPHOUS FILMS; CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; MAGNETORESISTANCE; PHASE TRANSITIONS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS;

ELECTRON-ELECTRON INTERACTIONS; GADOLINIUM SILICIDE; INSULATOR-TO-METAL TRANSITION; QUANTUM LOCALIZATION;

MAGNETIC SEMICONDUCTORS;

EID: 0033893381     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(00)00007-7     Document Type: Article

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