Resistance drift of aluminum oxide magnetic tunnel junction devices

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 437-441

  Ku, Pon S ^a   Chung, Young ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DUTY CYCLE; MAGNETIC TUNNEL JUNCTION; RESISTANCE DRIFT BEHAVIORS; STRESS CONDITIONS;

ALUMINA; ELECTRIC RESISTANCE; NATURAL FREQUENCIES; RELIABILITY;

TUNNEL JUNCTIONS;

EID: 34250772878     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251258     Document Type: Conference Paper

References (16)

1. Saied Tehrani et al., "Process and outlook for MRAM technology," IEEE Trans. Mags, vol.35, pp2814-2819, 2000.
2. Johan Akerman et al., Magnetoelectronics (Elsevier), chap. Magnetic Tunnel Junction Based Magnetoresistive Random Access Memory.
3. Johan Akerman et al., "Demonstrated Reliability of 4-Mb MRAM," IEEE Trans. Device and Materials Reliability, Vol. 4, pp. 428-435, 2004.
4. Jo Das et al, "Degradation and Breakdown of Plasma Oxidized Magnetic Tunnel Junctions: Single Trap Creation in Al2O3 Tunnel Barriers," IEEE Trans. Mags, Vol. 39, pp. 2815-2817, 2003.
5. Mark Dulram et al., "1-Mbit MRAM Based on 1T1MTJ Bit Cell Integrated With Copper Interconnects," J. Solid-State Circuits Vol. 38, No. 5, pp. 769-773, May 2003.
6. J.S. Moodera et al., "Spin polarized tunneling in ferromagnetic junctions," J. Magnetism and Magnetic Materials 200, pp. 248-273, 1999.
7. Johan Akerman et al., Origin of temperature dependence in tunneling magnetoresistance," Europhysics Letters 63, 104 (2003), ISSN 0295-5075
8. R. Degraeve et al., "Measurement and statistical analysis of single trap current-voltage characteristics in ultrathin SiON," Proc. of IRPS 98, pp. 57-61, 1998.
9. S. Kamuhara et al., "Deep-Trap SILC (Stress Induced Leakage Current) Model for Nominal and Weak Oxides," Proc. of IRPS 98, pp. 57-61, 1998
10. C. Shen et al., "Frequency Dependent Dynamic Charge Trapping in HrO2 and Threshold Voltage Instability in MOSFETs," Proc. of IRPS 04, pp. 601-602, 2004
11. R. Choi et al., "Charge Trapping and Detrapping Characteristics in Hafnium Silicate Gate Stack Under Static and Dynamic Stress," IEEE Electron Device Letters, Vol. 26, No.3, pp. 197-199, 2005
12. Y.H. Kim et al., "Dynamic Reliability Characteristics of Ultra-Thin HfO2," Proc. of IRPS 03, pp. 46-50, 2003
13. R. Bellens et al., "Hot-Carrier Degradation Behavior of N- and P-Channel MOSFET's Under Dynamic Operation Conditions," IEEE Trans. Electron Devices, Vol. 41, No. 8, pp. 1421-1428, 1994.
14. G. Chen et al., "Dynamic NBTI of PMOS Transistors and its Impact on Device Lifetime," Proc. of IRPS 03, pp. 196-202, 2003.
15. B. Zhu et al., "Mechanism of Dynamic NBTI of pMOSFETs," Final Report. of IRW 04, pp. 113-117, 2004.
16. K. Ohgata et al., "Universality of Power-Law Voltage dependence for TDDB lifetime in Thin Gate Oxide PMOSFETs," Proc. of IRPS 05, pp. 372-376, 2005.