Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers

Applied Physics Letters

Volumn 90, Issue 23, 2007, Pages

  Bae, Hopil P ^a   Bank, Seth R ^a,b   Yuen, Homan B ^a,c   Sarmiento, Tomas ^a   Pickett, Evan R ^a   Wistey, Mark A ^a,d   Harris, James S ^a  

^a STANFORD UNIVERSITY   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c Translucent Inc   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LASER PERFORMANCE; NITRIDE LASERS; TEMPERATURE DEPENDENCE;

ANNEALING; DEGRADATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS; THICKNESS MEASUREMENT; WAVELENGTH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34250761389     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2746944     Document Type: Article

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