Study of design factors affecting turn-on time of silicon controlled rectifiers (SCRs) in 90 and 65NM bulk CMOS technologies

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 163-168

  Sarro, James Di ^a   Chatty, Kiran ^b   Gauthier, Robert ^b   Rosenbaum, Elyse ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b IBM RESEARCH   (United States)

Author keywords

Electrostatic discharge (ESD); ESD protection circuits; Silicon Controlled Rectifier (SCR)

Indexed keywords

ELECTROSTATIC DISCHARGE (ESD); ESD PROTECTION CIRCUITS; SILICON CONTROLLED RECTIFIER (SCR);

CMOS INTEGRATED CIRCUITS; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRIC LINES; SEMICONDUCTING SILICON;

ELECTRIC RECTIFIERS;

EID: 34250693116     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251210     Document Type: Conference Paper

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