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34250678487
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XPS results for a wafer treated with KOH etching. The percentage reflects the fraction of the total XPS signal. 21.987% C; 29.421% Si(wafer); 9.918% Si(ox); 36.816% O; 0.000% Fe; 0.019% Co: 0.009% Ni; 0.009% Mn; 0.00982029% Gd; 0.009% Eu; 0.618% N; 0.520% Ca; 0.147% Na; 0.127% Zn; 0.382% Mg.
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XPS results for a wafer treated with KOH etching. The percentage reflects the fraction of the total XPS signal. 21.987% C; 29.421% Si(wafer); 9.918% Si(ox); 36.816% O; 0.000% Fe; 0.019% Co: 0.009% Ni; 0.009% Mn; 0.00982029% Gd; 0.009% Eu; 0.618% N; 0.520% Ca; 0.147% Na; 0.127% Zn; 0.382% Mg.
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22
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34250612224
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-2)) for a gap of 300 μm, which corresponds to the thickness of the sample after etching.
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-2)) for a gap of 300 μm, which corresponds to the thickness of the sample after etching.
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23
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0026918574
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T. Konishi, T. Yao, M. Tajima, H. Ohshima, H. Ito, T. Hattori, Jpn. J. Appl. Phys., Part 2 1992, 31, L1216.
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24
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34250662623
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In a few samples, when treated only with HF, an unusual diamagnetic signal was noted. Presently studies are being carried out to reveal the conditions under which this diamagnetic signal is obtained
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In a few samples, when treated only with HF, an unusual diamagnetic signal was noted. Presently studies are being carried out to reveal the conditions under which this diamagnetic signal is obtained.
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