Self-organized (111) faceted NiSi2 source and drain for advanced SOI MOSFETs

Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

Volumn , Issue , 2006, Pages 170-175

  Mise, Nobuyuki ^a   Watanabe, Yukimune ^a   Migita, Shinji ^a   Nabatame, Toshihide ^a   Satake, Hideki ^a   Toriumi, Akira ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); DRAIN CURRENT; ELECTRIC RESISTANCE; NICKEL COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY;

PARASITIC RESISTANCE; SHORT CHANNEL EFFECT (SCE); SOURCE AND DRAIN STRUCTURE;

MOSFET DEVICES;

EID: 34250190966     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iwjt.2006.220885     Document Type: Conference Paper

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