Sub-10 nm gate length metal/high-k SOI MOSFETs with NiSi2/Si (111)-facetted full silicide source/drain

Device Research Conference - Conference Digest, DRC

Volumn 2005, Issue , 2005, Pages 197-198

  Watanabe, Y ^a   Migita, S ^a   Mise, N ^a   Nabatame, T ^a   Satake, H ^a   Toriumi, A ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; NICKEL COMPOUNDS; SCHOTTKY BARRIER DIODES; TRANSMISSION ELECTRON MICROSCOPY;

SCHOTTKY CONTACTS; SHORT CHANNEL EFFECT (SCE); ULTRA-THIN BODY (UTB);

MOSFET DEVICES;

EID: 33751320899     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2005.1553118     Document Type: Conference Paper

References (7)

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4. T. Nabatame et al., VLSI Symp., p.25 (2003).
5. N. Mise et al., to be presented in Silicon Nano. Workshop (2005).
6. T. Ichimori et al., JJAP, 40, 2001, L1019 (2001).
7. A. Y. C. Yu, Solid-state Elec. 13, p.239 (1970).