Photoluminescence study in step-graded composition In x Al 1-x As/GaAs

Applied Surface Science

Volumn 253, Issue 1 SPEC. ISS., 2006, Pages 292-295

  Yahyaoui, N ^a   Aloulou, S ^a   Chtourou, R ^b   Sfaxi, A ^c   Oueslati, M ^a  

^a FACULTÉ DES SCIENCES DE TUNIS   (Tunisia)

^b Institut National de Recherche Scientifique et Technique Tunis   (Tunisia)

^c FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

Dislocation; Graded composition; Lattice mismatch; Photoluminescence

Indexed keywords

BAND STRUCTURE; CRYSTAL LATTICES; CRYSTALLINE MATERIALS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE;

BAND INTENSITY; DISLOCATION; GRADED COMPOSITION; LATTICE-MISMATCH;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 33751032061     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.05.095     Document Type: Article

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