Carrier-density fluctuation noise and the interface trap density in GaN/AlGaN HFETs

Materials Research Society Symposium Proceedings

Volumn 680, Issue , 2011, Pages 268-273

  Kotchetkov, Dmitri ^a   Balandin, Alexander A ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRON TRAPS; GALLIUM NITRIDE; GATE DIELECTRICS; SILICON WAFERS;

NOISE RESPONSE; TRAP DENSITY; TRAP DISTRIBUTION;

FIELD EFFECT TRANSISTORS;

EID: 34249904660     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-680-e9.13     Document Type: Conference Paper

References (11)

1. S.J. Cai, R. Li, Y.L. Chen, W.G. Wu, S.G. Thomas, and K.L. Wang, Electron. Lett. 34, 2354 (1998).
2. S. Rumyantsev, M.E. Levinshtein, R. Gaska, M.S. Shur, A. Khan, J.W. Yang, G. Simin, A. Fing, T. Adesida, Phys. Stat. Sol. A 176, 201 (1999).
3. A. Balandin, K.L. Wang, S.J. Cai, R. Li, C.R. Viswanathan, E.N. Wang, and M. Wojtowicz, J. Electronic Materials 29, 297 (2000).
4. A. Balandin, S. Morozov, G. Wijeratne, S.J. Cai, R. Li, J. Li, K.L. Wang, C.R. Viswanathan, and Yu. Dubrovskii, Appl. Phys. Lett. 75, 2064 (1999).
5. A. Balandin, S. Cai, R. Li, K.L. Wang, V. Ramgopal Rao, and C. R. Viswanathan, IEEE Electron Device Lett. 19, 475 (1998).
6. Sh. Kogan in Electronic Noise and Fluctuations in Solids (Cambridge University Press, 1996).
7. A. Balandin, S. Morozov, S.J. Cai, R. Li, K.L. Wang, C.R. Viswanathan, IEEE Trans on Microwave Theory & Tech, 47, 1413 (1999).
8. M.E. Levinshtein, S.L. Rumyantsev, R. Gaska, J.W. Yang, M.S. Shur, Appl. Phys. Lett., 73, 1089 (1998).
9. W.Y. Ho, C. Surya, K.Y. Tong, W. Kim, A.E. Bochkarev, and H. Morkoc, IEEE Trans on Electron Devices, 46, 1099 (1999).
10. J. Chang, A.A. Abidi, C.R. Viswanathan, IEEE Trans. Electron Devices 41, 1965 (1994).
11. Z. Celik-Butler and T.Y. Hsiang, Solid State Electon., 30, 419 (1987).