Fabrication of nanostructures using a C -methylcalix[4]resorcinarene dielectric spacer

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 3, 2007, Pages 877-880

  Fleischer, M ^a   Panteleit, F ^a,b   Wharam, D A ^a  

^a UNIVERSITY OF TÜBINGEN   (Germany)

^b CARL ZEISS SMT AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; DIELECTRIC DEVICES; HETEROJUNCTIONS; LITHOGRAPHY; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE;

DIELECTRIC RESIST SPACERS; RESORCINARENE; SPLIT-GATE APPROACH;

NANOSTRUCTURES;

EID: 34249904376     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2738483     Document Type: Article

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