Comparative study of calixarene and HSQ resist systems for the fabrication of sub-20 nm MOSFET device demonstrators

Microelectronic Engineering

Volumn 78-79, Issue 1-4, 2005, Pages 479-483

  Kretz, J ^a   Dreeskornfeld, L ^a   Ilicali, G ^a   Lutz, T ^a   Weber, W ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Calixarene; Electron beam lithography; HSQ; Resist

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPOSITION; DEMONSTRATIONS; ELECTRON BEAM LITHOGRAPHY; ETCHING; PARAMETER ESTIMATION; RESISTORS; SILICON;

CALIXARENE; DEVICE DEMONSTRATORS; HSQ; RESIST;

MOSFET DEVICES;

EID: 14944344980     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.12.061     Document Type: Conference Paper

References (11)

1. J. Fujita, Y. Ohnishi, Y. Ochiai, and S. Matsui Appl. Phys. Lett. 68 9 1996 1297
2. H. Namatsu, Y. Takahashi, K. Yamazaki, T. Yamaguchi, M. Nagase, and K. Kurihara J. Vac. Sci. Technol. B 16 1 1996 69
3. FOx-12 flowable oxide, Dow Corning, Midland, MI, USA
4. Y. Ochiai, S. Manako, J. Fujita, and E. Nomura J. Vac. Sci. Technol. B 17 3 1999 933
5. M. Ishida, J. Fujita, T. Ogura, Y. Ochiai, E. Ohshima, and J. Momoda Jpn. Soc. Appl. Phys. 42 6B 2003 3913
6. SYNCHEM, Kassel, Germany. Available from: 〈http://www.synchem. de〉
7. SYNTREX, Greifswald, Germany. Available from: 〈http://www.syntrex. de〉 (former: SYNAPTEC)
8. S. Yasin, and D.G. Hasko J. Vac. Sci. Technol. B 19 1 2001 311
9. J. Kretz, and L. Dreeskornfeld Microelectron. Eng. 61-62 2002 607
10. J. Kretz, L. Dreeskornfeld, J. Hartwich, and W. Rösner Microelectron. Eng. 67-68 2003 763
11. L. Dreeskornfeld, J. Hartwich, J. Kretz, D. Schmitt-Landsiedel, D. Loraine, K. Powell, and D.J. Thomas J. Electrochem. Soc. 150 11 2003 702 706