a-Si:H back-plane electronics for medical imaging and OLED displays

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Volumn , Issue , 2002, Pages 15-21

  Nathan, Arokia ^a   Sakariya, Kapil ^a   Karim, Karim S ^a   Servati, Peyman ^a   Kumar, Anil ^a   Striakhilev, Denis ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; ACTIVE MATRIX FLAT-PANEL IMAGERS; ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODE DISPLAYS; ACTIVE PIXEL; AMORPHOUS SILICON (A-SI:H); APERTURE RATIO; DESIGN CONSIDERATIONS; FILL FACTOR; GATE DRIVERS; HIGH-APERTURE; MEASUREMENT RESULTS; OLED DISPLAYS; PIXEL ARCHITECTURES; TFT CIRCUITS; THRESHOLD VOLTAGE SHIFTS;

ELECTRIC NETWORK TOPOLOGY; INTEGRATION; MEDICAL IMAGING; ORGANIC LIGHT EMITTING DIODES (OLED); SILICON; THIN FILM TRANSISTORS;

PIXELS;

EID: 34249868248     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (23)

1. T. Tsukada, Active-matrix liquid-crystal displays, in Technology and Applications of Hydrogenated Amorphous Silicon, edited by R. A. Street, Springer, New York, pp. 7-93, 2000.
2. W. Zhao and J. A. Rowlands, "X-ray imaging using amorphous selenium: Feasibility of a flat panel self-scanned detector for digital radiology," Medical Physics, vol. 22, no. 10, pp. 1595-1604, 1995..
3. R.A. Street, X.D. Wu, R. Weisfield, S. Ready, R. Apte, M. Nguyen, and P. Nylen, "Two dimensional amorphous silicon image sensor arrays," MRS Symposium Proceedings, vol. 377, pp. 757-766, 1995.
4. R. M. A. Dawson and M. G. Kane, "Pursuit of active matrix organic light emitting diode displays," Digest of Technical Papers, SID International Symp., San Jose, June 5-7, pp. 372-375, 2001.
5. P. Servati and A. Nathan, "Modeling of the reverse characteristics of a-Si:H TFTs," IEEE Trans. Electron Devices, vol. 49, no. 5, pp. 812-819,2002.
6. K.S. Karim and A. Nathan, Metastability in a-Si:H Circuits, UW E&CE Technical Report #2002-19, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada, 2002.
7. N. Mohan, K. S. Karim, and A. Nathan, 'Design of multiplexer in Amorphous Silicon Technology', J. Vac. Sci. Tech. A, vol. 40, p. 1043, 2002.
8. P. Servati, S. Prakash, A. Nathan, and Ch. Py, "Amorphous silicon driver circuits for OLED displays," J. Vac. Sci. Technol. A, vol. 20, no. 4, pp. 1374-1378, 2002.
9. Vitex Systems, http://www.vitexsys.com/solution.html
10. Symmorphix, Inc., http://www.svmmporphix.com/
11. G. Gu and S. R. Forrest, "Design of Flat-Panel Displays Based on Organic Light-Emitting Devices," IEEE Journal of Selected Topics in Quantum Electronics, vol. 4, No. 1, pp. 83-99, Jan./Feb. 1998.
12. Y. He, R. Hattori, J. Kanicki, 'Current-source a-Si:H thin film transistor circuit for active matrix organic light emitting displays', IEEE Electron Device Letts., vol. 21, p. 590, 2000.
13. K. S. Karim and A. Nathan, "Readout circuit in active pixel sensors in amorphous silicon technology," IEEE Electron Device Letts, vol. 22, no. 10, pp. 469-471, 2001.
14. S. K. Mendis, S. E. Kemeny, and E. R. Fossum, "CMOS active pixel image sensor," IEEE Trans. Electron Devices, vol. 41, no. 3, pp. 452-453, 1994.
15. K. S. Karim, A. Nathan, and J. A. Rowlands, "Alternate pixel architectures for large area medical imaging," Proc. SPIE, International Symposium on Medical Imaging, San Diego, California, February 17-23, vol. 4320, pp. 35-46, 2001.
16. Y. Uchida, Y. Nara, and M. Matsumura, "Proposed vertical-type amorphous-silicon field-effect transistors," IEEE Electron Device Lett., vol. 5, no. 4, pp. 105-107, 1984.
17. I. Chan, B. Park, A. Sazonov, and A. Nathan, "Process considerations for small area a-Si:H vertical thin film transistors," Electrochem. Soc. Symp. Proc, vol. 31, pp. 63-69, 2000.
18. I. Chan and A. Nathan, "Dry etch process optimization for small-area a-Si:H vertical thin film transistors," J. Vac. Sci. Technol. A, vol. 20, no. 4, pp. 962-965, 2002.
19. S. Sivoththaman, personal communication.
20. S. K. Kim, Y. J. Choi, W. K. Kwak, K. S. Cho, and J. Jang, "A novel coplanar amorphous silicon thin-film transistor using silicide layers," IEEE Electron Device Lett, vol. 20, no. 1, pp. 33-35, 1999.
21. M. J. Powell, C. Glasse, P. W. Green, I. D. French, and I. J. Stemp, "An amorphous silicon thin-film transistor with fully self-aligned top gate structure," IEEE Electron Device Lett, vol. 21, no. 3, pp. 104-106, 2000.
22. S. Sivoththaman, W. Laureys, J. Nijs, and R. Mertens, "Rapid thermal annealing of spin-coated phosphoric acid films for shallow junction formation," Appl. Phys. Lett, vol. 71, no. 3, 1997, pp. 392-394.
23. S. Sivoththaman, W. Laureys, P. De Schepperi J. Nijs, and R. Mertens, "Selective emitters in silicon by single step rapid thermal diffusion for photovoltaic devices," IEEE Electron Device Lett, vol. 21, no. 6, pp. 274-276, 2000.