Preparation of silicon nanowires under high pressure

Chinese Journal of Inorganic Chemistry

Volumn 23, Issue 5, 2007, Pages 915-918

  Chen, Yang Wen ^a   Jiang, Su Hua ^a   Shao, Bing Xian ^a   Wang, Rong Chang ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

Decomposition under high pressure; Oxide assisted growth mechanism; Silicon nanowire

Indexed keywords

EID: 34249690711     PISSN: 10014861     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (21)

1. Wang N, Yao B D, Chan Y F, et al. Nano Lett., 2003,3(4): 475-477
2. Barsotti R J, Fischer J E, Lee C H, et al. Appl. Phys. Lett., 2002,81(15):2866-2868
3. Maclpine M C, Friedman R S, Lieber C M. Proceedings of the IEEE, 2005,93(7):1357-1363
4. Allen P B. Nano Lett., 2007,7(1):6-10
5. Huang Y, Duan X F, Cui Y, et al. Science, 2001,294(9): 1313-1317
6. Cui Y, Wei Q Q, Park H K, et al. Science, 2001,293(17):1289 -1292
7. Tang Y H, Sun X H, Au F C K, et al. Appl. Phys. Lett., 2001, 79(11):1673-1675
8. Morales A M, Lieber C M. Science, 1998,279(9):208-211
9. Lee C S, Wang N, Tang Y H, et al. MRS. Bulletin., 1999:36 -41
10. Wang N L, Zhang Y J, Zhu J. Journal of Materials Science Letters, 2001,20:89-91
11. Zeng X B, Xu Y Y, Zhang S B, et al. Journal of Crystal Growth, 2003,247(1):13-16
12. Feng S Q, Yu D P, Zhang H Z, et al. Journal of Crystal Growth, 2000,209:513-517
13. Holmes J D, Johnston K P, Doty R C, et al. Science, 2000, 287:1471-1473
14. Pei L Z, Tang Y H, Chen Y W, et al. Journal of Crystal Growth, 2005,289:423-427
15. Li B B, Yu D P, Zhang S L. Phys. Rev. B, 1999,59:1645-1648
16. Liu J X, Niu J J, Yang D R. Physica E, 2004,23(2):221-225
17. Piscanec S, Cantoro M, Ferrari A C et al. Phys. Rev. B, 2003, 68:241312
18. Chen C C, Li J C, Jiang Q. Chem. Phys. Lett., 2003,372: 156-158
19. Bundy F P. J. Chem. Phys., 1964,41:3809-3814
20. Zhang Y F, Tang Y H, Peng H Y, et al. Appl. Phys. Lett., 1999,75(15):1842-1844
21. SHI Er-Wei, XIA Chang-Tai, WANG Bu-Guo, et al. Wuji Huaxue Xuebao(Chinese J. Inorg. Chem.), 1996,11(2):193-206