Development of magnetic tunnel junction for toggle MRAM

IEEE Transactions on Magnetics

Volumn 41, Issue 10, 2005, Pages 2661-2663

  Kim, H J ^a   Oh, S C ^a   Bae, J S ^a   Nam, K T ^a   Lee, J E ^a   Park, S O ^a   Kim, H S ^a   Lee, N I ^a   Chung, U In ^a   Moon, J T ^a   Kang, H K ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Exchange coupling field; Magnetic anisotropy field; Magnetic tunnel junction (MTJ); Toggle MRAM

Indexed keywords

MAGNETIC ANISOTROPY; RANDOM ACCESS STORAGE; THICKNESS MEASUREMENT;

EXCHANGE COUPLING FIELDS; MAGNETIC ANISOTROPY FIELD; MAGNETIC TUNNEL JUNCTION (MTJ); TOGGLE MRAM;

TUNNEL JUNCTIONS;

EID: 27744458153     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2005.854935     Document Type: Article

References (8)

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