High speed toggle MRAM with MgO-based tunnel junctions

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 873-876

  Slaughter, J M ^a   Dave, R W ^a   Durlam, M ^a   Kerszykowski, G ^a   Smith, K ^a   Nagel, K ^a   Feil, B ^a   Calder, J ^a   DeHerrera, M ^a   Garni, B ^a   Tehrani, S ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; LOGIC CIRCUITS; MAGNESIA; MAGNETORESISTANCE; TUNNEL JUNCTIONS;

MAGNETIC TUNNEL JUNCTION (MTJ); MAGNETORESISTANCE-RATIO (MR); TOGGLE SWITCHING;

RANDOM ACCESS STORAGE;

EID: 33847708297     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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3. Stuart S. P. Parkin, Christian Kaiser, Alex Panchula, Philip M. Rice, Brian Hughes, Mahesh Samant, and See-Hun Yang, "Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers," Nature Materials 3, 862-867 (2004).
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