Growth characteristics of ZnMgTe layer on ZnTe substrate by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 449-452

  Saito, Katsuhiko ^a   Yamashita, Tetsuo ^a   Kouno, Daisuke ^a   Tanaka, Tooru ^a   Nishio, Mitsuhiro ^a   Guo, Qixin ^a   Ogawa, Hiroshi ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

A1. Characterization; A3. Metalorganic vapor phase epitaxy; B1. Tellurites; B1. Zinc compounds; B2. Semiconducting ii vi materials

Indexed keywords

ATMOSPHERIC PRESSURE; COMPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; REACTION KINETICS; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES;

DIETHYLTELLURIDE (DETE); DIMETHYLZINC; TERNARY EPITAXIAL LAYERS; TRANSPORT RATE;

EPITAXIAL GROWTH;

EID: 33846409924     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.141     Document Type: Article

References (5)

1. Qu'Hen B., Quesada X., Kuhn W.S., Bourée J.E., Svob L., Lusson A., and Gorochov O. J. Crystal Growth 138 (1994) 1079
2. Asano T., Funato K., Nakamura F., and Ishibashi A. J. Crystal Growth 156 (1995) 373
3. Poole I.B., Ng T.L., Maung N., Williams J.O., and Wright A.C. J.Crystal Growth 170 (1997) 528
4. Konczewicz L., Brgenwald P., Cloitre T., Chibane M., Ricou R., Testud P., Briot O., and Aulombard R.L. J. Crystal Growth 159 (1996) 117
5. Nishio M., Hayashida K., Guo Q., and Ogawa H. Appl. Surf. Sci. 169-170 (2001) 227