Highly conductive P-type ZnTe:As grown by atmospheric metallorganic chemical vapor deposition using trimethylarsine

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 1 B, 1996, Pages

  Kamata, Atsushi ^a   Yoshida, Hiroaki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CARRIER CONCENTRATION; COMPOSITION EFFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; EXCITONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

ARSENIC DOPED ZINC TELLURIDE; TRIMETHYLARSINE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0029752874     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l87     Document Type: Article

References (6)