Statistical study of the effect of interface charge fluctuations in HEMTs using a 3D simulator

Journal of Computational Electronics

Volumn 5, Issue 4, 2006, Pages 385-388

  Seoane, Natalia ^a   Garcia Loureiro A J ^a   Kalna, K ^b   Asenov, A ^b  

^a UNIVERSITY OF SANTIAGO DE COMPOSTELA   (Spain)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

3D simulations; Drift diffusion; HEMT devices; Interface charge; Intrinsic parameter fluctuations

Indexed keywords

GATES (TRANSISTOR); SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STATISTICAL METHODS; THREE DIMENSIONAL;

DEVICE SIMULATOR; DRIFT DIFFUSION; INTERFACE CHARGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34248674625     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-006-0019-4     Document Type: Article

References (11)

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