Efficient three-dimensional parallel simulations of PHEMTs

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Volumn 18, Issue 5, 2005, Pages 327-340

  Garcia Loureiro A J ^a   Kalna, K ^b   Asenov, A ^b  

^a UNIVERSITY OF SANTIAGO DE COMPOSTELA   (Spain)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

3D simulations; Domain decomposition; Drift diffusion; HEMT; Parallel scalability

Indexed keywords

DOMAIN DECOMPOSITION; DRIFT-DIFFUSION; PARALLEL SCALABILITY; THREE-DIMENSIONAL (3D) SIMULATIONS;

ALGORITHMS; COMPUTER SIMULATION; DIFFUSION; ELECTRON MOBILITY; FINITE ELEMENT METHOD; MULTIPROCESSING SYSTEMS; POISSON EQUATION; SEMICONDUCTOR DEVICES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 24944462739     PISSN: 08943370     EISSN: None     Source Type: Journal    
DOI: 10.1002/jnm.581     Document Type: Article

References (17)

1. t of 562 Ghz. IEEE Electronic Device Letters 2002; 23(10):573-575.
2. Asenov A. Random dopant induced threshold voltage lowering and fluctuations in sub 0.1 μm MOSFETs: a 3D 'Atomistic' simulation study. IEEE Transactions on Electron Devices 1998; 45:2505-2513.
3. Hussain S, Cole E, Snowden CM. Hot-Electron numerical modelling of short gate length pHEMTs applied to novel field plate structures. International Journal of Numerical Modelling: Electronics Networks, Devices and Fields 2003; 16:15-28.
4. Saad Y. Iterative Methods for Sparse Linear Systems. PWS Publishing Co.: Boston, 1996.
5. García-Loureiro AJ, Pena TF, López-González JM, Prat L. Parallel finite element method to solve the 3D Poisson equation and its application to abrupt heterojunction bipolar transistors. International Journal for Numerical Methods in Engineering 2000; 49(5):639-652.
6. Group W, Lusk E, Skjellum A. Using MPI. The MIT Press: Boston, 1996.
7. The Message Passing Interface Standard, http://www-unix.mcs.anl.gov/mpi/ index.html
8. Kalna K, Roy S, Asenov A, Elgaid K, Thayne I. Scaling of PHEMTs to decanano dimensions. Solid-State Electronics 2002; 46:631-638.
9. Selberherr S. Analysis and Simulation of Semiconductor Devices. Springer: Berlin, 1984.
10. Markowich PA. The Stationary Semiconductor Device Equations. Springer: Berlin, 1986.
11. Vavasis SA. QMG 1.1 Reference Manual. Computer Science Department, Cornell University, 1996.
12. Karypis G, Kumar V. METIS: a software package for partitioning unstructured graphs, partitioning meshes, and computing fill-reducing orderings of sparse matrices, University of Minnesota, 1997.
13. Zienkiewicz OC. The Finite Element Method. McGraw-Hill: New York, 1977.
14. Barrett R, Berry M, Chan T, Demmel J, Donato J, Dongarra J, Eijkhout V, Pozo R, Romine C, van der Vorst H. Templates for the Solution of Linear Systems: Building Blocks for Iterative Methods. SIAM: Philadelphia, 1994.
15. Saad Y, Lo G-C, Kuznetsov S. PSPARSLIB users manual: a portable library of parallel sparse iterative solvers. Technical Report, Department of Computer Science, University of Minnesota, 1997.
16. Kalna K, Asenov A, Elgaid K, Thayne I. Scaling of PHEMTs to decanano dimensions. VLSI Design 2001; 13(1-4):435-439.
17. Babiker S, Asenov A, Cameron N, Beaumont SP. A simple approach to include external resistances in the Monte Carlo simulation of MESFETs and HEMTs. IEEE Transactions on Electron Devices 1996; 43:2032-2034.