Electron and hole current characteristics of n-i-p-type semiconductor quantum dot transistor

IEEE Transactions on Nanotechnology

Volumn 6, Issue 3, 2007, Pages 320-327

  Fujihashi, Chugo ^a,b   Yukiya, Tokio ^b   Asenov, Asen ^a,c  

^a IEEE   (Japan)

^b TOKYO POLYTECHNIC UNIVERSITY   (Japan)

^c UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Electron and hole current; n i p type; Quantum dot transistor; Stochastic theoretical solution

Indexed keywords

HOLE CURRENT; QUANTUM DOT TRANSISTOR; STOCHASTIC THEORETICAL SOLUTION;

ELECTRONS; HOLE CONCENTRATION; NUMERICAL METHODS; RANDOM PROCESSES; TRANSISTORS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34248669022     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2007.893570     Document Type: Article

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