Effect of the tunneling rates on the conductance characteristics of single-electron transistors

IEICE Transactions on Electronics

Volumn E83-C, Issue 8, 2000, Pages 1242-1246

  Scholze, Andreas ^a   Schenk, Andreas ^a   Fichtnert, Wolfgang ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; FREE ENERGY; OSCILLATIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

BARDEEN TRANSFER HAMILTONIAN FORMALISM; COULOMB BLOCKADE; FREE ENERGY MINIMIZATION; SINGLE ELECTRON TRANSISTORS; TUNNELING RATES;

ELECTRON TUNNELING;

EID: 0034246986     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

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8. F. Simmel, T. Heinzel, and D.A. Wharam, "Statistics of conductance oscillations of a quantum dot in the Coulombblockade regime," Europhys. Lett., vol.38, pp.123-128, April 1997.