1D physical non-quasi static BJT circuit model based on the equivalent transmission line analysis

Journal of Computational Electronics

Volumn 3, Issue 1, 2004, Pages 13-24

  Jankovic, Nebojsa D ^a   Pesic, Tatjana V ^a   Karamarkovic, Jugoslav P ^a  

^a UNIVERSITY OF NI   (Serbia)

Author keywords

Bipolar; Circuit; Model; Non quasi static

Indexed keywords

BIPOLAR TRANSISTORS; DIFFERENTIAL AMPLIFIERS; DOPING (ADDITIVES); ELECTRIC LINES; HETEROJUNCTION BIPOLAR TRANSISTORS; MOSFET DEVICES; POWER TRANSMISSION; REAL TIME SYSTEMS; TRANSISTORS; TRANSMISSION LINE THEORY; TUNNEL DIODES;

BAND-GAP NARROWING; BIPOLAR; BIPOLAR JUNCTION TRANSISTORS; CIRCUIT; CIRCUIT MODELS; DOPING EFFECTS; EARLY EFFECTS; EQUIVALENT TRANSMISSION LINES; GUMMEL-POON MODELS; INJECTION EFFECTS; INJECTION LEVELS; KIRK EFFECTS; LIFE-TIME; MINORITY CARRIERS; MODEL; MODEL REPRESENTATIONS; MOMENTUM RELAXATIONS; NEUTRAL REGIONS; NON QUASI STATICS; NON-QUASI STATIC; ONE-DIMENSIONAL; PHYSICALLY BASED; SIGE HBT; STABILITY ANALYSIS; TRANSIENT CIRCUIT ANALYSIS; WEBSTER EFFECTS;

ELECTRIC NETWORK ANALYSIS;

EID: 34248658459     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/B:JCEL.0000029452.79759.cd     Document Type: Article

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