Effects of quasi-ballistic base transport on the high-frequency characteristics of bipolar transistors

IEEE Transactions on Electron Devices

Volumn 44, Issue 4, 1997, Pages 618-626

  Vaidyanathan, Mani ^a   Pulfrey, David L ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; ELECTRIC CURRENTS; FUNCTIONS; INTEGRAL EQUATIONS; VECTORS;

BOLTZMANN TRANSPORT EQUATION; QUASI BALLISTIC BASE TRANSPORT;

BIPOLAR TRANSISTORS;

EID: 0031124021     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.563367     Document Type: Article

References (17)

1. J. M. Early, "Design theory of junction transistors," Bell Syst. Tech. J., vol. XXXII, pp. 1271-1312, Nov. 1953.
2. R. L. Pritchard, "Frequency variations of junction-transistor parameters," in Proc. IRE, May 1954, vol. 42, pp. 786-799.
3. _, Electrical Characteristics of Transistors. New York: McGraw-Hill, 1967.
4. A. A. Grinberg and S. Luryi, "Diffusion in a short base," Solid-State Electron., vol. 35, pp. 1299-1309, Sept. 1992.
5. _, "Ballistic versus diffusive base transport in the high-frequency characteristics of bipolar transistors," Appl. Phys. Lett., vol. 60, pp. 2770-2772, June 1992.
6. M. A. Alam, S. Tanaka, and M. S. Lundstrom, "A small-signal, one-flux analysis of short-base transport," Solid-State Electron., vol. 38, pp. 177-182, Jan. 1995.
7. M. A. Alam, M. Schröter, and M. S. Lundstrom, "Influence of quasi-ballistic base transport on the small signal y-parameters of Si bipolar transistors," Electron Device Lett., vol. 17, pp. 184-186, Apr. 1996.
8. W. Shockley, "Diffusion and drift of minority carriers in semiconductors for comparable capture and scattering mean free paths," Phys. Rev., vol. 125, pp. 1570-1576, Mar. 1962.
9. M. Vaidyanathan and D. L. Pulfrey, "An appraisal of the one-flux method for treating carrier transport in modern semiconductor devices," Solid-State Electron., vol. 39, pp. 827-832, June 1996.
10. D. E. Thomas and J. L. Moll, "Junction transistor short-circuit current gain and phase determination," in Proc. IRE, June 1958, vol. 46, pp. 1177-1184.
11. M. A. Stettler and M. S. Lundstrom, "A microscopic study of transport in thin base silicon bipolar transistors," IEEE Trans. Electron Devices, vol. 41, pp. 1027-1033, June 1994.
12. S. Tanaka and M. S. Lundstrom, "A compact HBT device model based on a one-flux treatment of carrier transport," Solid-State Electron., vol. 37, pp. 401-110, Mar. 1994.
13. O. Hansen, "Diffusion in a short base," Solid-State Electron., vol. 37, pp. 1663-1669, Sept. 1994.
14. R. L. Pritchard, "Frequency variations of current-amplification factor for junction transistors," in Proc. IRE, Nov. 1952, vol. 40, pp. 1476-1481.
15. D. J. Roulston, "Early voltage in very-narrow-base bipolar transistors," IEEE Electron Device Lett., vol. 11, pp. 88-89, Feb. 1990;
16. also in J. J. Liou, IEEE Electron Device Lett., vol. 11, p. 236, May 1990.
17. S. Tanaka and M. S. Lundstrom, "A flux-based approach to HBT device modeling," in IEEE IEDM Tech. Dig., 1993, pp. 505-508.