메뉴 건너뛰기




Volumn , Issue , 2000, Pages 337-340

Automatic generation of equivalent circuits from device simulation

Author keywords

Compact models; Equivalent circuits; RF circuit simulation; Semiconductor device simulation

Indexed keywords

COMPACT MODELS; CURRENT GENERATORS; DEVICE SIMULATIONS; ELECTROSTATIC POTENTIAL;

EID: 6344243489     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (9)
  • 1
    • 0020180685 scopus 로고
    • General optimization and extraction of IC device model parameters
    • Sept.
    • K. Doganis and D. L. Scharfetter, "General optimization and extraction of IC device model parameters", IEEE Trans. Electron Devices, vol. 30, pp. 1219-1228, Sept. 1983.
    • (1983) IEEE Trans. Electron Devices , vol.30 , pp. 1219-1228
    • Doganis, K.1    Scharfetter, D.L.2
  • 2
    • 0026888767 scopus 로고
    • A nonlinear integral model of electron devices for HB circuit analysis
    • July
    • F. Filicori, G. Vannini, and V. A. Monaco, "A nonlinear integral model of electron devices for HB circuit analysis", IEEE Trans. Microwave Theory and Techniques, vol. 40, pp. 1456-1465, July 1992.
    • (1992) IEEE Trans. Microwave Theory and Techniques , vol.40 , pp. 1456-1465
    • Filicori, F.1    Vannini, G.2    Monaco, V.A.3
  • 3
    • 3042617262 scopus 로고
    • A table lookup FET model for accurate analog circuit simulation
    • Feb.
    • A. Rofougaran and A. A. Abidi, "A table lookup FET model for accurate analog circuit simulation", IEEE Trans. Computer-Aided Design, vol. 12, pp. 324-335, Feb. 1993.
    • (1993) IEEE Trans. Computer-aided Design , vol.12 , pp. 324-335
    • Rofougaran, A.1    Abidi, A.A.2
  • 4
    • 6344263363 scopus 로고    scopus 로고
    • Development of RF equivalent circuit models from physics-based device models
    • S. Luryi, J. Xu, and A. Zaslavsky, Eds. John Wiley and Sons
    • S. Luryi, "Development of RF equivalent circuit models from physics-based device models", in Future Trends in Microelectronics, S. Luryi, J. Xu, and A. Zaslavsky, Eds., pp. 463-466. John Wiley and Sons, 1999.
    • (1999) Future Trends in Microelectronics , pp. 463-466
    • Luryi, S.1
  • 5
    • 33645482889 scopus 로고
    • The equivalent circuit model in solid-state electronics-III. Conduction and displacement currents
    • C. T. Sah, "The equivalent circuit model in solid-state electronics-III. Conduction and displacement currents", Solid State Electronics, vol. 13, pp. 1547-1575, 1970.
    • (1970) Solid State Electronics , vol.13 , pp. 1547-1575
    • Sah, C.T.1
  • 7
    • 0002371631 scopus 로고
    • Simulation of ULSI device effects
    • M. R. Pinto, "Simulation of ULSI device effects", in VLSI Science Technology, 1991, vol. 91-11, pp. 43-51.
    • (1991) VLSI Science Technology , vol.91 , Issue.11 , pp. 43-51
    • Pinto, M.R.1
  • 8
    • 0033079594 scopus 로고    scopus 로고
    • Revisiting the analytic theory of p-n junction impedance: Improvements guided by computer simulation leading to a new equivalent circuit
    • Feb.
    • S. E. Laux and K. Hess, "Revisiting the analytic theory of p-n junction impedance: Improvements guided by computer simulation leading to a new equivalent circuit", IEEE Trans. Electron Devices, vol. 46, pp. 396-412, Feb. 1999.
    • (1999) IEEE Trans. Electron Devices , vol.46 , pp. 396-412
    • Laux, S.E.1    Hess, K.2
  • 9
    • 0025522242 scopus 로고
    • Modelling the inductive behavior of short-base p - n junction diodes at high forward bias
    • J. J. H. van den Biesen, "Modelling the inductive behavior of short-base p - n junction diodes at high forward bias", Solid-State Electron., vol. 33, pp. 1471-1476, 1990.
    • (1990) Solid-state Electron. , vol.33 , pp. 1471-1476
    • Van Den Biesen, J.J.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.